![]() The first three sections are dedicated to (1) etching, (2) atomic modification including phase, defect and dopant patterning, and (3) new techniques for lithographic patterning and growth including controlled growth of heterostructures and doping. Specifically, we focus on transition metal dichalcogenides (TMDCs), and to a lesser extent MXenes and black phosphorus (BP) on the materials side and further focus on advancements in nanoscale etching, doping, phase and defect patterning techniques to induce new structures or fundamental physical phenomena for unique advantages or advancements in terms of device properties.īased on the above overview, this review is divided into four distinct sections. 1, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 Therefore, in this review, we specifically attempt to summarize the progress in spatially controlled, structural modulation from the perspective of applications in electronic and opto-electronic devices. With that said, we note that an overwhelming number of reviews are already available on the growth, synthesis, physical and chemical properties, as well as device advancements resulting from post-graphene 2D materials. Toward that end, significant progress has been achieved for the case of post-graphene 2D materials over the past few years. Uniform and large area synthesis and, more importantly, amenability to nanofabrication techniques for spatial modulation of composition, carrier concentration (doping), and morphology is critical for advanced applications and bench marking with known, commercialized semiconductors such as Si and III-V semiconductors. However, the isolation and identification of a novel semiconductor is only the starting point relative to commercial scale applications. Among them, the layered mono and dichalcogenides, nitrides and oxides as well as the elemental layered allotrope of phosphorus were identified to have semiconducting or insulating character and therefore presented a unique opportunity for two-dimensional (2D) opto-electronics. Soon thereafter, multiple other layered crystals were identified and isolated into single-unit cell thick monolayers. ![]() 10, 11, 12 However, graphene is semi-metallic in nature and therefore unsuitable for electronic-switching devices. Toward that end, the isolation of graphene and measurement of its electrical properties presented a landmark moment for materials, devices, and condensed matter physics research. 8, 9 However, the requirement of uniform, electronically homogeneous and structurally monodisperse material precludes most contenders to replace silicon. Several such materials have been heavily investigated over the past two decades ranging from individual organic molecules and polymers 3, 4 to carbon nanotubes 5, 6, 7 and semiconducting nanowires. 1, 2 Therefore, new materials are constantly being sought, discovered, and researched to either supplement or replace silicon in electronic devices. While silicon continues to play a dominant role in microelectronics, it is approaching its fundamental limits in terms of scaling down as well as device performance. Precise dimensional and compositional control in silicon over nm 2 device areas combined with availability of silicon in large quantities with high crystalline quality has been the key to success and prevalence of silicon-based electronics. Semiconductor electronics and opto-electronics is a high volume, scaled-up, and commercial technology.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |